POLYSILICON LPCVD WITH DISILANE (Si2H6)


Disilane (Si2H6) offers several advantages over SiH4 for the polysilicon and amorphous Si LPCVD processes: higher deposition rates at low temperatures and better uniformity and smoothness. By growing at lower temperatures there are fewer nucleation sites, so the grains are larger. This results in fewer grain boundary traps, lower resistivity, and higher carrier mobility.




LPCVD Processes