POLYSILICON LPCVD WITH SILANE (SiH₄)

The most widely used process gas for polysilicon LPCVD is silane (SiH₄). Polysilicon LPCVD may be achieved using other alternative gases such as disilane (see Polysilicon by LPCVD with Disilane), dichloro-silane, and trichloro-silane. Each of them offers its own unique advantages depending on the area of application. Polysilicon may be doped in situ using phosphine (PH₃) (see P-Doped Polysilicon by LPCVD).

• Typical Film Thickness: 0.1 to 2 µm
• Batch Size: 50 (18" flat zone) or 100 (34" flat zone)
• Deposition Rate: 6 - 20 nm/min. (60 - 200 Å/min.)
• Deposition Gases: Silane SiH₄
• Deposition Temperature: 580 - 650 °C
• Index of Refraction: 3.5 - 5.5
• Uniformity: < 3% using 1 σ
• Residual Stress: 50 - 100 MPa

Applications: MEMS structures, resistors, MOSFET gates, DRAM cell plates, trench fills, bipolar transistor emitters, solar cells.

LPCVD Processes

• Silicon Carbide Devices
• Silicon Nitride Resonators
• Doped Silicon by LPCVD
• POLYSILICON LPCVD WITH SILANE (SiH₄)
• POLYSILICON LPCVD WITH DISILANE (Si₂H₆)
• LTO, DOPED LTO, BPSG, BSG, AND PSG LPCVD
• HTO LPCVD
• TEOS LPCVD
• Silicon Nitride LPCVD
• Low-Stress Silicon Nitride LPCVD
• Stochiometric Silicon Nitride LPCVD
• Silicon Oxynitride (SiN_xO_y) LPCVD
• Silicon Germanium (Si-Ge) LPCVD
• SIPOS (Semi-Insulating Polycrystalline Silicon)
• Polycrystalline Silicon Carbide
• Epitaxial Silicon
• Nano Materials LPCVD