HTO LPCVD

High temperature silicon dioxide is formed by the reaction of N₂O and dichlorosilane. The oxide quality is comparable to the thermal oxidation process (with the exception of a chlorine impurity), but the reaction does not consume the silicon substrate.

• Typical Film Thickness: 0.45 µm
• Batch Size: 50
• Deposition Rate: 5 - 10 nm/min. (50 - 100 Å/min.)
• Deposition Gases: Dichlorosilane, Nitrous Oxide
• Deposition Temperature: 800 - 900 °C
• Index of Refraction: 1.45 - 1.47

Applications: flash memory, shallow trench isolation, side-wall spacers, inter-poly dielectrics.

LPCVD Processes

• Silicon Carbide Devices
• Silicon Nitride Resonators
• Doped Silicon by LPCVD
• POLYSILICON LPCVD WITH SILANE (SiH₄)
• POLYSILICON LPCVD WITH DISILANE (Si₂H₆)
• LTO, DOPED LTO, BPSG, BSG, AND PSG LPCVD
• HTO LPCVD
• TEOS LPCVD
• Silicon Nitride LPCVD
• Low-Stress Silicon Nitride LPCVD
• Stochiometric Silicon Nitride LPCVD
• Silicon Oxynitride (SiN_xO_y) LPCVD
• Silicon Germanium (Si-Ge) LPCVD
• SIPOS (Semi-Insulating Polycrystalline Silicon)
• Polycrystalline Silicon Carbide
• Epitaxial Silicon
• Nano Materials LPCVD