LPCVD Processes

LPCVD refers to a thermal process used to deposit thin films from gas-phase precursors at subatmospheric pressures. Process conditions are typically selected so that the growth rate is limited by the rate of the surface reaction, which is temperature-dependent. The temperature can be controlled with great precision, resulting in excellent within-wafer, wafer-to-wafer, and run-to-run uniformities. Tystar has years of experience and an industry-wide reputation for its expertise in the following LPCVD processes:

• Silicon Carbide Devices
• Silicon Nitride Resonators
• Doped Silicon by LPCVD
• POLYSILICON LPCVD WITH SILANE (SiH₄)
• POLYSILICON LPCVD WITH DISILANE (Si₂H₆)
• LTO, DOPED LTO, BPSG, BSG, AND PSG LPCVD
• HTO LPCVD
• TEOS LPCVD
• Silicon Nitride LPCVD
• Low-Stress Silicon Nitride LPCVD
• Stochiometric Silicon Nitride LPCVD
• Silicon Oxynitride (SiN_xO_y) LPCVD
• Silicon Germanium (Si-Ge) LPCVD
• SIPOS (Semi-Insulating Polycrystalline Silicon)
• Polycrystalline Silicon Carbide
• Epitaxial Silicon
• Nano Materials LPCVD