POCL₃ or BBR₃ Liquid Source Dopant Diffusion

In these processes, nitrogen carries the liquid source from a bubbler to the process tube where it reacts with oxygen to form a borosilicate or phosphosilicate glass. Dopant atoms then diffuse into the silicon to dope it.

• Sheet Resistance: 1-100 Ω/□
• Batch Size: 50
• Gases: Nitrogen, Oxygen, Hydrogen
• Uniformity: < 10%

Atmospheric Processes

• Silicon Carbide Devices
• Silicon Dioxide Resonators
• Wet Oxidation
• Dry Oxidation with TLC Bubbler Cleaning Option
• Thick Thermal Oxides
• Diffusion of Solid Source Dopants
• POCL₃ or BBR₃ Liquid Source Dopant Diffusion
• Anneal
• Nano Materials LPCVD