Dry Oxidation with TLC Bubbler Cleaning Option

Dry oxidation is slower than the wet process due to oxygen's slower rate of diffusion through the silicon dioxide layer to the silicon/oxide interface where the oxidation reaction occurs. It produces a high-density pinhole-free oxide and is thus the preferred method for growing gate oxides and surface passivation oxides such as pad oxides for nitride stress buffering, screen oxides for ion implantation, sacrificial oxides for surface defect removal, and barrier oxides for shallow trench isolation. TLC (trans-1,2-dichloroethylene) is a non-ozone depleting source of chlorine for scavenging mobile metal ion contaminants that impair gate oxide integrity. It also increases the oxidation process growth rate by a few percent.

• Typical Film Thickness:
  • 10 nm to 0.5 μm
• Batch Size:
  • 100 in 18 flat zone
  • 200 in 34 heater
• Oxidation Rate: Standard Chart Rates Deal-Grove for both methods
• Oxidation Gases: Oxygen, TLC (C₂H₂Cl₂)
• Oxidation Temperature: 800 - 1250 °C
• Refraction Index: 1.45 - 1.47 at 550 nm
• Uniformity:
  • < 5% 1σ for thickness of 100 to 500 Å
  • < 3% 1σ for thickness > 500 Å

Applications: gate oxides, surface passivation, nitride stress buffering, sacrificial oxides, barrier oxides

Note: Temperatures above 1,150 °C require silicon carbide cantilever rods, wafer boats, and tube liners.

Atmospheric Processes

• Silicon Carbide Devices
• Silicon Dioxide Resonators
• Wet Oxidation
• Dry Oxidation with TLC Bubbler Cleaning Option
• Thick Thermal Oxides
• Diffusion of Solid Source Dopants
• POCL₃ or BBR₃ Liquid Source Dopant Diffusion
• Anneal
• Nano Materials LPCVD