LPCVD Processes

wafers

LPCVD refers to a thermal process used to deposit thin films from gas-phase precursors at subatmospheric pressures. Process conditions are typically selected so that the growth rate is limited by the rate of the surface reaction, which is temperature-dependent. The temperature can be controlled with great precision, resulting in excellent within-wafer, wafer-to-wafer, and run-to-run uniformities. Tystar has years of experience and an industry-wide reputation for its expertise in the following LPCVD processes:

Click on any of the items to toggle content.


► Doped Polysilicon and Amorphous Silicon LPCVD

► Polysilicon LPCVD with Silane (Si H4)

► Polysilicon LPCVD with Disilane (Si2H6)

► LTO, Doped LTO, BPSG, BSG, and PSG LPCVD

► HTO LPCVD

► TEOS LPCVD

► Silicon Nitride LPCVD

► Silicon Germanium (Si-Ge) LPCVD

► SIPOS (Semi-Insulating Polycrystalline Silicon)

► Polycrystalline Silicon Carbide

► Epitaxial Silicon

► NANO MATERIALS LPCVD